CoInGaAs as a novel self-aligned metallic source/drain material for implant-less In 0.53Ga 0.47As n-MOSFETs

CoInGaAs as a novel self-aligned metallic source/drain material for implant-less In 0.53Ga 0.47As n-MOSFETs

10.1016/j.sse.2012.05.030

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Bibliographic Details
Main Authors: Ivana, Kong, E.Y.-J., Subramanian, S., Zhou, Q., Pan, J., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Subjects:
Cobalt
Contact metallization
InGaAs
Self-aligned
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83555
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Institution: National University of Singapore

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