CoInGaAs as a novel self-aligned metallic source/drain material for implant-less In 0.53Ga 0.47As n-MOSFETs

• Main Authors: Ivana, Kong, E.Y.-J., Subramanian, S., Zhou, Q., Pan, J., Yeo, Y.-C.
• 其他作者: ELECTRICAL & COMPUTER ENGINEERING
• 格式: Conference or Workshop Item
• 出版: 2014
• 主題: Cobalt; Contact metallization; InGaAs; Self-aligned
• 在線閱讀: http://scholarbank.nus.edu.sg/handle/10635/83555
• 機構: National University of Singapore

10.1016/j.sse.2012.05.030