Direct trim etching process of Si/SiO2 gate stacks using 193 nm ArF patterns

10.1116/1.1690258

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Bibliographic Details
Main Authors:	Tan, K.M., Yoo, W.J., Ma, H.H.H., Li, F., Chan, L.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/83634
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-83634
record_format	dspace
spelling	sg-nus-scholar.10635-836342023-10-29T21:04:24Z Direct trim etching process of Si/SiO2 gate stacks using 193 nm ArF patterns Tan, K.M. Yoo, W.J. Ma, H.H.H. Li, F. Chan, L. ELECTRICAL & COMPUTER ENGINEERING 10.1116/1.1690258 Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films 22 4 1500-1505 JVTAD 2014-10-07T04:43:27Z 2014-10-07T04:43:27Z 2004-07 Conference Paper Tan, K.M., Yoo, W.J., Ma, H.H.H., Li, F., Chan, L. (2004-07). Direct trim etching process of Si/SiO2 gate stacks using 193 nm ArF patterns. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films 22 (4) : 1500-1505. ScholarBank@NUS Repository. https://doi.org/10.1116/1.1690258 07342101 http://scholarbank.nus.edu.sg/handle/10635/83634 000223322000071 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	10.1116/1.1690258
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Tan, K.M. Yoo, W.J. Ma, H.H.H. Li, F. Chan, L.
format	Conference or Workshop Item
author	Tan, K.M. Yoo, W.J. Ma, H.H.H. Li, F. Chan, L.
spellingShingle	Tan, K.M. Yoo, W.J. Ma, H.H.H. Li, F. Chan, L. Direct trim etching process of Si/SiO2 gate stacks using 193 nm ArF patterns
author_sort	Tan, K.M.
title	Direct trim etching process of Si/SiO2 gate stacks using 193 nm ArF patterns
title_short	Direct trim etching process of Si/SiO2 gate stacks using 193 nm ArF patterns
title_full	Direct trim etching process of Si/SiO2 gate stacks using 193 nm ArF patterns
title_fullStr	Direct trim etching process of Si/SiO2 gate stacks using 193 nm ArF patterns
title_full_unstemmed	Direct trim etching process of Si/SiO2 gate stacks using 193 nm ArF patterns
title_sort	direct trim etching process of si/sio2 gate stacks using 193 nm arf patterns
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/83634
_version_	1781784375276339200

Direct trim etching process of Si/SiO2 gate stacks using 193 nm ArF patterns

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