Direct trim etching process of Si/SiO2 gate stacks using 193 nm ArF patterns

• Main Authors: Tan, K.M., Yoo, W.J., Ma, H.H.H., Li, F., Chan, L.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Conference or Workshop Item
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/83634
• Institution: National University of Singapore

10.1116/1.1690258