Direct trim etching process of Si/SiO2 gate stacks using 193 nm ArF patterns

10.1116/1.1690258

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Bibliographic Details
Main Authors: Tan, K.M., Yoo, W.J., Ma, H.H.H., Li, F., Chan, L.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83634
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Institution: National University of Singapore

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