Effects of microtrenching from polysilicon gate patterning on 0.13μm MOSFET device performance

Effects of microtrenching from polysilicon gate patterning on 0.13μm MOSFET device performance

International Symposium on IC Technology, Systems and Applications

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Bibliographic Details
Main Authors: Chua, C.S., Chor, E.F., Yu, J., Pradeep, Y., Chan, L.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83681
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/83681

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