Effects of microtrenching from polysilicon gate patterning on 0.13μm MOSFET device performance

Effects of microtrenching from polysilicon gate patterning on 0.13μm MOSFET device performance

International Symposium on IC Technology, Systems and Applications

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書目詳細資料
Main Authors:	Chua, C.S., Chor, E.F., Yu, J., Pradeep, Y., Chan, L.
其他作者:	ELECTRICAL & COMPUTER ENGINEERING
格式:	Conference or Workshop Item
出版:	2014
在線閱讀:	http://scholarbank.nus.edu.sg/handle/10635/83681
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!
機構:	National University of Singapore

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