Germanium tin tunneling field-effect transistor for sub-0.4 v operation

10.1149/05009.0979ecst

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Bibliographic Details
Main Authors:	Yang, Y., Low, K.L., Guo, P., Wei, W., Han, G., Yeo., Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/83763
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-83763
record_format	dspace
spelling	sg-nus-scholar.10635-837632023-10-30T07:17:49Z Germanium tin tunneling field-effect transistor for sub-0.4 v operation Yang, Y. Low, K.L. Guo, P. Wei, W. Han, G. Yeo., Y.-C. ELECTRICAL & COMPUTER ENGINEERING 10.1149/05009.0979ecst ECS Transactions 50 9 979-986 2014-10-07T04:44:54Z 2014-10-07T04:44:54Z 2012 Conference Paper Yang, Y., Low, K.L., Guo, P., Wei, W., Han, G., Yeo., Y.-C. (2012). Germanium tin tunneling field-effect transistor for sub-0.4 v operation. ECS Transactions 50 (9) : 979-986. ScholarBank@NUS Repository. https://doi.org/10.1149/05009.0979ecst 9781607683575 19385862 http://scholarbank.nus.edu.sg/handle/10635/83763 000338015300117 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	10.1149/05009.0979ecst
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Yang, Y. Low, K.L. Guo, P. Wei, W. Han, G. Yeo., Y.-C.
format	Conference or Workshop Item
author	Yang, Y. Low, K.L. Guo, P. Wei, W. Han, G. Yeo., Y.-C.
spellingShingle	Yang, Y. Low, K.L. Guo, P. Wei, W. Han, G. Yeo., Y.-C. Germanium tin tunneling field-effect transistor for sub-0.4 v operation
author_sort	Yang, Y.
title	Germanium tin tunneling field-effect transistor for sub-0.4 v operation
title_short	Germanium tin tunneling field-effect transistor for sub-0.4 v operation
title_full	Germanium tin tunneling field-effect transistor for sub-0.4 v operation
title_fullStr	Germanium tin tunneling field-effect transistor for sub-0.4 v operation
title_full_unstemmed	Germanium tin tunneling field-effect transistor for sub-0.4 v operation
title_sort	germanium tin tunneling field-effect transistor for sub-0.4 v operation
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/83763
_version_	1781784388277633024

Germanium tin tunneling field-effect transistor for sub-0.4 v operation

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