Germanium tin tunneling field-effect transistor for sub-0.4 v operation

Germanium tin tunneling field-effect transistor for sub-0.4 v operation

10.1149/05009.0979ecst

Saved in:

Bibliographic Details
Main Authors:	Yang, Y., Low, K.L., Guo, P., Wei, W., Han, G., Yeo., Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/83763
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	National University of Singapore

Similar Items

Germanium-tin p-channel tunneling field-effect transistor: Device design and technology demonstration
by: Yang, Y., et al.
Published: (2014)

Germanium-tin n-channel tunneling field-effect transistor: Device physics and simulation study
by: Yang, Y., et al.
Published: (2014)

Towards direct band-to-band tunneling in P-channel tunneling field effect transistor (TFET): Technology enablement by Germanium-tin (GeSn)
by: Yang, Y., et al.
Published: (2014)

Source engineering for tunnel field-effect transistor: Elevated source with vertical silicon-germanium/germanium heterostructure
by: Han, G., et al.
Published: (2014)

Silicon-based tunneling field-effect transistor with elevated germanium source formed on (110) silicon substrate
by: Han, G., et al.
Published: (2014)

Device physics and design of a L-shaped germanium source tunneling transistor
by: Low, K.L., et al.
Published: (2014)

Tunneling field-effect transistor (TFET) with novel Ge/In 0.53Ga0.47As tunneling junction
by: Guo, P., et al.
Published: (2014)

Tunneling field-effect transistor with Ge/In0.53Ga 0.47As heterostructure as tunneling junction
by: Guo, P., et al.
Published: (2014)

Tunneling field-effect transistor with Ge/In0.53Ga0.47As heterostructure as tunneling junction
by: Hu, Hailong., et al.
Published: (2013)

Device design and scalability of a double-gate tunneling field-effect transistor with silicon - germanium source
by: Toh, E.-H., et al.
Published: (2014)

Metal stanogermanide contacts with enhanced thermal stability for high mobility germanium-tin field-effect transistor
by: Wang, L., et al.
Published: (2014)

Strain Engineering for Advanced Silicon, Germanium and Germanium-Tin Transistors
by: CHENG RAN
Published: (2014)

Device physics and guiding principles for the design of double-gate tunneling field effect transistor with silicon-germanium source heterojunction
by: Toh, E.-H., et al.
Published: (2014)

Simulation of tunneling field-effect transistors with extended source structures
by: Yang, Y., et al.
Published: (2014)

Germanium multiple-gate field-effect transistors formed on germanium-on-insulator substrate
by: Liu, B., et al.
Published: (2014)

Tunneling field-effect transistor: Effect of strain and temperature on tunneling current
by: Guo, P.-F., et al.
Published: (2014)

Device physics and design of germanium tunneling field-effect transistor with source and drain engineering for low power and high performance applications
by: Toh, E.-H., et al.
Published: (2014)

Strain engineering and junction design for tunnel field-effect transistor
by: Yeo, Y.-C., et al.
Published: (2014)

Tunneling field-effect transistor: Capacitance components and modeling
by: Yang, Y., et al.
Published: (2014)

ADVANCED GERMANIUM-TIN P-CHANNEL METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS
by: LEI DIAN
Published: (2018)

2D semimetal with ultrahigh work function for sub-0.1 V threshold voltage operation of metal-semiconductor field-effect transistors
by: Zhang, Tianjiao, et al.
Published: (2023)

ADVANCED SOURCE AND DRAIN CONTACT ENGINEERING FOR GERMANIUM-TIN AND SILICON-GERMANIUM TRANSISTORS
by: XU HAIWEN
Published: (2023)

High-mobility Germanium-Tin Field-Effect Transistors: Surface Passivation, Contact, and Doping Technologies
by: WANG LANXIANG
Published: (2014)

Metrology solutions using optical scatterometry for advanced CMOS: III-V and Germanium multi-gate field-effect transistors
by: Chin, H.-C., et al.
Published: (2014)

Strained germanium-tin (GeSn) p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with ammonium sulfide passivation
by: Wang, L., et al.
Published: (2014)

Germanium source and drain stressors for ultrathin-body and nanowire field-effect transistors
by: Liow, T.-Y., et al.
Published: (2014)

Advanced Transistors for Supply Voltage Reduction: Tunneling Field-Effect Transistors and High-Mobility MOSFETS
by: GUO PENGFEI
Published: (2013)

SPICE behavioral model of the tunneling field-effect transistor for circuit simulation
by: Hong, Y., et al.
Published: (2014)

Impact ionization nanowire transistor with multiple-gates, silicon-germanium impact ionization region, and sub-5 mV/decade subtheshold swing
by: Toh, E.-H., et al.
Published: (2014)

Germanium multiple-gate field-effect transistor with in situ boron-doped raised source/drain
by: Liu, B., et al.
Published: (2014)

(110)-oriented germanium-tin (Ge0.97Sn0.03) P-channel MOSFETs
by: Zhan, C., et al.
Published: (2014)

Valence band structure of ultrathin silicon and germanium channels in metal-oxide-semiconductor field-effect transistors
by: Low, Tony, et al.
Published: (2013)

Valence band structure of ultrathin silicon and germanium channels in metal-oxide-semiconductor field-effect transistors
by: Low, T., et al.
Published: (2014)

N-channel InGaAs field-effect transistors formed on germanium-on-insulator substrates
by: Ivana, et al.
Published: (2014)

Germanium-tin (GeSn) p-channel fin field-effect transistor fabricated on a novel GeSn-on-insulator substrate
by: Lei, Dian, et al.
Published: (2020)

Fabrication and Characterization of Tunneling Field Effect Transistors (TFETs)
by: YANG LITAO
Published: (2011)

Simulation and optimisation of a tunneling field effect transistor
by: Neo, Samuel Choon Wee
Published: (2011)

N-channel InGaAs field-effect transistors formed on germanium-on-insulator substrates
by: Ivana, et al.
Published: (2013)

Metrology solutions for high performance germanium multi-gate field-effect transistors using optical scatterometry
by: Chin, H.-C., et al.
Published: (2014)

Effect of fin doping concentration on the electrical characteristics of germanium-on-insulator multi-gate field-effect transistor
by: Liu, B., et al.
Published: (2014)