Germanium tin tunneling field-effect transistor for sub-0.4 v operation

Germanium tin tunneling field-effect transistor for sub-0.4 v operation

10.1149/05009.0979ecst

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Bibliographic Details
Main Authors: Yang, Y., Low, K.L., Guo, P., Wei, W., Han, G., Yeo., Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83763
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/83763

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