High hole mobility in strained germanium-tin (GeSn) channel pMOSFET fabricated on (111) substrate

High hole mobility in strained germanium-tin (GeSn) channel pMOSFET fabricated on (111) substrate

10.1149/05009.0943ecst

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Main Authors: Han, G., Su, S., Yang, Y., Guo, P., Gong, X., Wang, L., Wang, W., Guo, C., Zhang, G., Xue, C., Cheng, B., Yeo, Y.C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83779
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Institution: National University of Singapore
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spelling sg-nus-scholar.10635-837792023-10-29T20:48:51Z High hole mobility in strained germanium-tin (GeSn) channel pMOSFET fabricated on (111) substrate Han, G. Su, S. Yang, Y. Guo, P. Gong, X. Wang, L. Wang, W. Guo, C. Zhang, G. Xue, C. Cheng, B. Yeo, Y.C. ELECTRICAL & COMPUTER ENGINEERING 10.1149/05009.0943ecst ECS Transactions 50 9 943-948 2014-10-07T04:45:05Z 2014-10-07T04:45:05Z 2012 Conference Paper Han, G., Su, S., Yang, Y., Guo, P., Gong, X., Wang, L., Wang, W., Guo, C., Zhang, G., Xue, C., Cheng, B., Yeo, Y.C. (2012). High hole mobility in strained germanium-tin (GeSn) channel pMOSFET fabricated on (111) substrate. ECS Transactions 50 (9) : 943-948. ScholarBank@NUS Repository. https://doi.org/10.1149/05009.0943ecst 9781607683575 19385862 http://scholarbank.nus.edu.sg/handle/10635/83779 000338015300112 Scopus
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
description 10.1149/05009.0943ecst
author2 ELECTRICAL & COMPUTER ENGINEERING
author_facet ELECTRICAL & COMPUTER ENGINEERING
Han, G.
Su, S.
Yang, Y.
Guo, P.
Gong, X.
Wang, L.
Wang, W.
Guo, C.
Zhang, G.
Xue, C.
Cheng, B.
Yeo, Y.C.
format Conference or Workshop Item
author Han, G.
Su, S.
Yang, Y.
Guo, P.
Gong, X.
Wang, L.
Wang, W.
Guo, C.
Zhang, G.
Xue, C.
Cheng, B.
Yeo, Y.C.
spellingShingle Han, G.
Su, S.
Yang, Y.
Guo, P.
Gong, X.
Wang, L.
Wang, W.
Guo, C.
Zhang, G.
Xue, C.
Cheng, B.
Yeo, Y.C.
High hole mobility in strained germanium-tin (GeSn) channel pMOSFET fabricated on (111) substrate
author_sort Han, G.
title High hole mobility in strained germanium-tin (GeSn) channel pMOSFET fabricated on (111) substrate
title_short High hole mobility in strained germanium-tin (GeSn) channel pMOSFET fabricated on (111) substrate
title_full High hole mobility in strained germanium-tin (GeSn) channel pMOSFET fabricated on (111) substrate
title_fullStr High hole mobility in strained germanium-tin (GeSn) channel pMOSFET fabricated on (111) substrate
title_full_unstemmed High hole mobility in strained germanium-tin (GeSn) channel pMOSFET fabricated on (111) substrate
title_sort high hole mobility in strained germanium-tin (gesn) channel pmosfet fabricated on (111) substrate
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/83779
_version_ 1781784390047629312

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