High hole mobility in strained germanium-tin (GeSn) channel pMOSFET fabricated on (111) substrate

• Main Authors: Han, G., Su, S., Yang, Y., Guo, P., Gong, X., Wang, L., Wang, W., Guo, C., Zhang, G., Xue, C., Cheng, B., Yeo, Y.C.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Conference or Workshop Item
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/83779
• Institution: National University of Singapore

10.1149/05009.0943ecst