High hole mobility in strained germanium-tin (GeSn) channel pMOSFET fabricated on (111) substrate

High hole mobility in strained germanium-tin (GeSn) channel pMOSFET fabricated on (111) substrate

10.1149/05009.0943ecst

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Bibliographic Details
Main Authors: Han, G., Su, S., Yang, Y., Guo, P., Gong, X., Wang, L., Wang, W., Guo, C., Zhang, G., Xue, C., Cheng, B., Yeo, Y.C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83779
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/83779

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