High temperature stable [Ir3Si-TaN]/HfLaON CMOS with large work-function difference

High temperature stable [Ir3Si-TaN]/HfLaON CMOS with large work-function difference

10.1109/IEDM.2006.346859

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Bibliographic Details
Main Authors: Wu, C.H., Hung, B.F., Chin, A., Wang, S.J., Chen, W.J., Wang, X.P., Li, M.-F., Zhu, C., Jin, Y., Tao, H.J., Chen, S.C., Liang, M.S.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83795
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Institution: National University of Singapore
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Summary:10.1109/IEDM.2006.346859

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