High-mobility germanium-tin (GeSn) P-channel MOSFETs featuring metallic source/drain and sub-370°C process modules

High-mobility germanium-tin (GeSn) P-channel MOSFETs featuring metallic source/drain and sub-370°C process modules

10.1109/IEDM.2011.6131569

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Bibliographic Details
Main Authors: Han, G., Su, S., Zhan, C., Zhou, Q., Yang, Y., Wang, L., Guo, P., Wei, W., Wong, C.P., Shen, Z.X., Cheng, B., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83801
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Institution: National University of Singapore
Description
Summary:10.1109/IEDM.2011.6131569

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