High-mobility germanium-tin (GeSn) P-channel MOSFETs featuring metallic source/drain and sub-370°C process modules

• Main Authors: Han, G., Su, S., Zhan, C., Zhou, Q., Yang, Y., Wang, L., Guo, P., Wei, W., Wong, C.P., Shen, Z.X., Cheng, B., Yeo, Y.-C.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Conference or Workshop Item
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/83801
• Institution: National University of Singapore

10.1109/IEDM.2011.6131569