High-mobility germanium-tin (GeSn) P-channel MOSFETs featuring metallic source/drain and sub-370°C process modules

10.1109/IEDM.2011.6131569

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Bibliographic Details
Main Authors:	Han, G., Su, S., Zhan, C., Zhou, Q., Yang, Y., Wang, L., Guo, P., Wei, W., Wong, C.P., Shen, Z.X., Cheng, B., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/83801
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-83801
record_format	dspace
spelling	sg-nus-scholar.10635-838012015-01-07T12:22:45Z High-mobility germanium-tin (GeSn) P-channel MOSFETs featuring metallic source/drain and sub-370°C process modules Han, G. Su, S. Zhan, C. Zhou, Q. Yang, Y. Wang, L. Guo, P. Wei, W. Wong, C.P. Shen, Z.X. Cheng, B. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING 10.1109/IEDM.2011.6131569 Technical Digest - International Electron Devices Meeting, IEDM 16.7.1-16.7.3 TDIMD 2014-10-07T04:45:20Z 2014-10-07T04:45:20Z 2011 Conference Paper Han, G.,Su, S.,Zhan, C.,Zhou, Q.,Yang, Y.,Wang, L.,Guo, P.,Wei, W.,Wong, C.P.,Shen, Z.X.,Cheng, B.,Yeo, Y.-C. (2011). High-mobility germanium-tin (GeSn) P-channel MOSFETs featuring metallic source/drain and sub-370°C process modules. Technical Digest - International Electron Devices Meeting, IEDM : 16.7.1-16.7.3. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/IEDM.2011.6131569" target="_blank">https://doi.org/10.1109/IEDM.2011.6131569</a> 9781457705052 01631918 http://scholarbank.nus.edu.sg/handle/10635/83801 NOT_IN_WOS Scopus
institution	National University of Singapore
building	NUS Library
country	Singapore
collection	ScholarBank@NUS
description	10.1109/IEDM.2011.6131569
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Han, G. Su, S. Zhan, C. Zhou, Q. Yang, Y. Wang, L. Guo, P. Wei, W. Wong, C.P. Shen, Z.X. Cheng, B. Yeo, Y.-C.
format	Conference or Workshop Item
author	Han, G. Su, S. Zhan, C. Zhou, Q. Yang, Y. Wang, L. Guo, P. Wei, W. Wong, C.P. Shen, Z.X. Cheng, B. Yeo, Y.-C.
spellingShingle	Han, G. Su, S. Zhan, C. Zhou, Q. Yang, Y. Wang, L. Guo, P. Wei, W. Wong, C.P. Shen, Z.X. Cheng, B. Yeo, Y.-C. High-mobility germanium-tin (GeSn) P-channel MOSFETs featuring metallic source/drain and sub-370°C process modules
author_sort	Han, G.
title	High-mobility germanium-tin (GeSn) P-channel MOSFETs featuring metallic source/drain and sub-370°C process modules
title_short	High-mobility germanium-tin (GeSn) P-channel MOSFETs featuring metallic source/drain and sub-370°C process modules
title_full	High-mobility germanium-tin (GeSn) P-channel MOSFETs featuring metallic source/drain and sub-370°C process modules
title_fullStr	High-mobility germanium-tin (GeSn) P-channel MOSFETs featuring metallic source/drain and sub-370°C process modules
title_full_unstemmed	High-mobility germanium-tin (GeSn) P-channel MOSFETs featuring metallic source/drain and sub-370°C process modules
title_sort	high-mobility germanium-tin (gesn) p-channel mosfets featuring metallic source/drain and sub-370°c process modules
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/83801
_version_	1681089502776393728

High-mobility germanium-tin (GeSn) P-channel MOSFETs featuring metallic source/drain and sub-370°C process modules

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