In-situ surface passivation and metal-gate/high-k dielectric stack formation for N-channel gallium arsenide metal-oxide-semiconductor field-effect transistors

10.1109/VTSA.2008.4530782

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Bibliographic Details
Main Authors:	Chin, H.-C., Zhu, M., Whang, S.-J., Tung, C.-H., Samudra, G.S., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/83846
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-83846
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spelling	sg-nus-scholar.10635-838462023-10-26T09:43:24Z In-situ surface passivation and metal-gate/high-k dielectric stack formation for N-channel gallium arsenide metal-oxide-semiconductor field-effect transistors Chin, H.-C. Zhu, M. Whang, S.-J. Tung, C.-H. Samudra, G.S. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING 10.1109/VTSA.2008.4530782 International Symposium on VLSI Technology, Systems, and Applications, Proceedings 26-27 2014-10-07T04:45:52Z 2014-10-07T04:45:52Z 2008 Conference Paper Chin, H.-C., Zhu, M., Whang, S.-J., Tung, C.-H., Samudra, G.S., Yeo, Y.-C. (2008). In-situ surface passivation and metal-gate/high-k dielectric stack formation for N-channel gallium arsenide metal-oxide-semiconductor field-effect transistors. International Symposium on VLSI Technology, Systems, and Applications, Proceedings : 26-27. ScholarBank@NUS Repository. https://doi.org/10.1109/VTSA.2008.4530782 9781424416158 http://scholarbank.nus.edu.sg/handle/10635/83846 000256564900011 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	10.1109/VTSA.2008.4530782
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Chin, H.-C. Zhu, M. Whang, S.-J. Tung, C.-H. Samudra, G.S. Yeo, Y.-C.
format	Conference or Workshop Item
author	Chin, H.-C. Zhu, M. Whang, S.-J. Tung, C.-H. Samudra, G.S. Yeo, Y.-C.
spellingShingle	Chin, H.-C. Zhu, M. Whang, S.-J. Tung, C.-H. Samudra, G.S. Yeo, Y.-C. In-situ surface passivation and metal-gate/high-k dielectric stack formation for N-channel gallium arsenide metal-oxide-semiconductor field-effect transistors
author_sort	Chin, H.-C.
title	In-situ surface passivation and metal-gate/high-k dielectric stack formation for N-channel gallium arsenide metal-oxide-semiconductor field-effect transistors
title_short	In-situ surface passivation and metal-gate/high-k dielectric stack formation for N-channel gallium arsenide metal-oxide-semiconductor field-effect transistors
title_full	In-situ surface passivation and metal-gate/high-k dielectric stack formation for N-channel gallium arsenide metal-oxide-semiconductor field-effect transistors
title_fullStr	In-situ surface passivation and metal-gate/high-k dielectric stack formation for N-channel gallium arsenide metal-oxide-semiconductor field-effect transistors
title_full_unstemmed	In-situ surface passivation and metal-gate/high-k dielectric stack formation for N-channel gallium arsenide metal-oxide-semiconductor field-effect transistors
title_sort	in-situ surface passivation and metal-gate/high-k dielectric stack formation for n-channel gallium arsenide metal-oxide-semiconductor field-effect transistors
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/83846
_version_	1781784396521537536

In-situ surface passivation and metal-gate/high-k dielectric stack formation for N-channel gallium arsenide metal-oxide-semiconductor field-effect transistors

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