In-situ surface passivation and metal-gate/high-k dielectric stack formation for N-channel gallium arsenide metal-oxide-semiconductor field-effect transistors

• Main Authors: Chin, H.-C., Zhu, M., Whang, S.-J., Tung, C.-H., Samudra, G.S., Yeo, Y.-C.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Conference or Workshop Item
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/83846
• Institution: National University of Singapore

10.1109/VTSA.2008.4530782