In-situ surface passivation and metal-gate/high-k dielectric stack formation for N-channel gallium arsenide metal-oxide-semiconductor field-effect transistors
10.1109/VTSA.2008.4530782
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| Main Authors: | , , , , , |
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| 格式: | Conference or Workshop Item |
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2014
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| 在線閱讀: | http://scholarbank.nus.edu.sg/handle/10635/83846 |
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