Lanthanide and Ir-based dual metal-Gate/HfAlON CMOS with large work-function difference

Technical Digest - International Electron Devices Meeting, IEDM

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Bibliographic Details
Main Authors:	Yu, D.S., Chin, A., Wu, C.H., Li, M.-F., Zhu, C., Wang, S.J., Yoo, W.J., Hung, B.F., McAlister, S.P.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/83881
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-83881
record_format	dspace
spelling	sg-nus-scholar.10635-838812015-01-06T20:54:54Z Lanthanide and Ir-based dual metal-Gate/HfAlON CMOS with large work-function difference Yu, D.S. Chin, A. Wu, C.H. Li, M.-F. Zhu, C. Wang, S.J. Yoo, W.J. Hung, B.F. McAlister, S.P. ELECTRICAL & COMPUTER ENGINEERING Technical Digest - International Electron Devices Meeting, IEDM 2005 634-637 TDIMD 2014-10-07T04:46:16Z 2014-10-07T04:46:16Z 2005 Conference Paper Yu, D.S.,Chin, A.,Wu, C.H.,Li, M.-F.,Zhu, C.,Wang, S.J.,Yoo, W.J.,Hung, B.F.,McAlister, S.P. (2005). Lanthanide and Ir-based dual metal-Gate/HfAlON CMOS with large work-function difference. Technical Digest - International Electron Devices Meeting, IEDM 2005 : 634-637. ScholarBank@NUS Repository. 078039268X 01631918 http://scholarbank.nus.edu.sg/handle/10635/83881 NOT_IN_WOS Scopus
institution	National University of Singapore
building	NUS Library
country	Singapore
collection	ScholarBank@NUS
description	Technical Digest - International Electron Devices Meeting, IEDM
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Yu, D.S. Chin, A. Wu, C.H. Li, M.-F. Zhu, C. Wang, S.J. Yoo, W.J. Hung, B.F. McAlister, S.P.
format	Conference or Workshop Item
author	Yu, D.S. Chin, A. Wu, C.H. Li, M.-F. Zhu, C. Wang, S.J. Yoo, W.J. Hung, B.F. McAlister, S.P.
spellingShingle	Yu, D.S. Chin, A. Wu, C.H. Li, M.-F. Zhu, C. Wang, S.J. Yoo, W.J. Hung, B.F. McAlister, S.P. Lanthanide and Ir-based dual metal-Gate/HfAlON CMOS with large work-function difference
author_sort	Yu, D.S.
title	Lanthanide and Ir-based dual metal-Gate/HfAlON CMOS with large work-function difference
title_short	Lanthanide and Ir-based dual metal-Gate/HfAlON CMOS with large work-function difference
title_full	Lanthanide and Ir-based dual metal-Gate/HfAlON CMOS with large work-function difference
title_fullStr	Lanthanide and Ir-based dual metal-Gate/HfAlON CMOS with large work-function difference
title_full_unstemmed	Lanthanide and Ir-based dual metal-Gate/HfAlON CMOS with large work-function difference
title_sort	lanthanide and ir-based dual metal-gate/hfalon cmos with large work-function difference
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/83881
_version_	1681089517228916736

Lanthanide and Ir-based dual metal-Gate/HfAlON CMOS with large work-function difference

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