Lanthanide and Ir-based dual metal-Gate/HfAlON CMOS with large work-function difference

• Main Authors: Yu, D.S., Chin, A., Wu, C.H., Li, M.-F., Zhu, C., Wang, S.J., Yoo, W.J., Hung, B.F., McAlister, S.P.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Conference or Workshop Item
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/83881
• Institution: National University of Singapore

Technical Digest - International Electron Devices Meeting, IEDM