Lanthanide and Ir-based dual metal-Gate/HfAlON CMOS with large work-function difference

Technical Digest - International Electron Devices Meeting, IEDM

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Bibliographic Details
Main Authors: Yu, D.S., Chin, A., Wu, C.H., Li, M.-F., Zhu, C., Wang, S.J., Yoo, W.J., Hung, B.F., McAlister, S.P.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83881
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Institution: National University of Singapore
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