Long retention and low voltage operation using IrO2/HfAlO/HfSiO/ HfAlO gate stack for memory application

Long retention and low voltage operation using IrO2/HfAlO/HfSiO/ HfAlO gate stack for memory application

Technical Digest - International Electron Devices Meeting, IEDM

Saved in:
Bibliographic Details
Main Authors: Wang, Y.Q., Singh, P.K., Yoo, W.J., Yeo, Y.C., Samudra, G., Chin, A., Hwang, W.S., Chen, J.H., Wang, S.J., Kwong, D.-L.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83901
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: National University of Singapore
Description
Summary:Technical Digest - International Electron Devices Meeting, IEDM

Similar Items