Long retention and low voltage operation using IrO2/HfAlO/HfSiO/ HfAlO gate stack for memory application
Technical Digest - International Electron Devices Meeting, IEDM
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2014
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sg-nus-scholar.10635-839012015-01-08T17:22:07Z Long retention and low voltage operation using IrO2/HfAlO/HfSiO/ HfAlO gate stack for memory application Wang, Y.Q. Singh, P.K. Yoo, W.J. Yeo, Y.C. Samudra, G. Chin, A. Hwang, W.S. Chen, J.H. Wang, S.J. Kwong, D.-L. ELECTRICAL & COMPUTER ENGINEERING Technical Digest - International Electron Devices Meeting, IEDM 2005 162-165 TDIMD 2014-10-07T04:46:31Z 2014-10-07T04:46:31Z 2005 Conference Paper Wang, Y.Q.,Singh, P.K.,Yoo, W.J.,Yeo, Y.C.,Samudra, G.,Chin, A.,Hwang, W.S.,Chen, J.H.,Wang, S.J.,Kwong, D.-L. (2005). Long retention and low voltage operation using IrO2/HfAlO/HfSiO/ HfAlO gate stack for memory application. Technical Digest - International Electron Devices Meeting, IEDM 2005 : 162-165. ScholarBank@NUS Repository. 078039268X 01631918 http://scholarbank.nus.edu.sg/handle/10635/83901 NOT_IN_WOS Scopus |
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Technical Digest - International Electron Devices Meeting, IEDM |
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ELECTRICAL & COMPUTER ENGINEERING |
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ELECTRICAL & COMPUTER ENGINEERING Wang, Y.Q. Singh, P.K. Yoo, W.J. Yeo, Y.C. Samudra, G. Chin, A. Hwang, W.S. Chen, J.H. Wang, S.J. Kwong, D.-L. |
format |
Conference or Workshop Item |
author |
Wang, Y.Q. Singh, P.K. Yoo, W.J. Yeo, Y.C. Samudra, G. Chin, A. Hwang, W.S. Chen, J.H. Wang, S.J. Kwong, D.-L. |
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Wang, Y.Q. Singh, P.K. Yoo, W.J. Yeo, Y.C. Samudra, G. Chin, A. Hwang, W.S. Chen, J.H. Wang, S.J. Kwong, D.-L. Long retention and low voltage operation using IrO2/HfAlO/HfSiO/ HfAlO gate stack for memory application |
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Wang, Y.Q. |
title |
Long retention and low voltage operation using IrO2/HfAlO/HfSiO/ HfAlO gate stack for memory application |
title_short |
Long retention and low voltage operation using IrO2/HfAlO/HfSiO/ HfAlO gate stack for memory application |
title_full |
Long retention and low voltage operation using IrO2/HfAlO/HfSiO/ HfAlO gate stack for memory application |
title_fullStr |
Long retention and low voltage operation using IrO2/HfAlO/HfSiO/ HfAlO gate stack for memory application |
title_full_unstemmed |
Long retention and low voltage operation using IrO2/HfAlO/HfSiO/ HfAlO gate stack for memory application |
title_sort |
long retention and low voltage operation using iro2/hfalo/hfsio/ hfalo gate stack for memory application |
publishDate |
2014 |
url |
http://scholarbank.nus.edu.sg/handle/10635/83901 |
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1681089520813998080 |