Long retention and low voltage operation using IrO2/HfAlO/HfSiO/ HfAlO gate stack for memory application

Technical Digest - International Electron Devices Meeting, IEDM

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Main Authors: Wang, Y.Q., Singh, P.K., Yoo, W.J., Yeo, Y.C., Samudra, G., Chin, A., Hwang, W.S., Chen, J.H., Wang, S.J., Kwong, D.-L.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83901
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Institution: National University of Singapore
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spelling sg-nus-scholar.10635-839012015-01-08T17:22:07Z Long retention and low voltage operation using IrO2/HfAlO/HfSiO/ HfAlO gate stack for memory application Wang, Y.Q. Singh, P.K. Yoo, W.J. Yeo, Y.C. Samudra, G. Chin, A. Hwang, W.S. Chen, J.H. Wang, S.J. Kwong, D.-L. ELECTRICAL & COMPUTER ENGINEERING Technical Digest - International Electron Devices Meeting, IEDM 2005 162-165 TDIMD 2014-10-07T04:46:31Z 2014-10-07T04:46:31Z 2005 Conference Paper Wang, Y.Q.,Singh, P.K.,Yoo, W.J.,Yeo, Y.C.,Samudra, G.,Chin, A.,Hwang, W.S.,Chen, J.H.,Wang, S.J.,Kwong, D.-L. (2005). Long retention and low voltage operation using IrO2/HfAlO/HfSiO/ HfAlO gate stack for memory application. Technical Digest - International Electron Devices Meeting, IEDM 2005 : 162-165. ScholarBank@NUS Repository. 078039268X 01631918 http://scholarbank.nus.edu.sg/handle/10635/83901 NOT_IN_WOS Scopus
institution National University of Singapore
building NUS Library
country Singapore
collection ScholarBank@NUS
description Technical Digest - International Electron Devices Meeting, IEDM
author2 ELECTRICAL & COMPUTER ENGINEERING
author_facet ELECTRICAL & COMPUTER ENGINEERING
Wang, Y.Q.
Singh, P.K.
Yoo, W.J.
Yeo, Y.C.
Samudra, G.
Chin, A.
Hwang, W.S.
Chen, J.H.
Wang, S.J.
Kwong, D.-L.
format Conference or Workshop Item
author Wang, Y.Q.
Singh, P.K.
Yoo, W.J.
Yeo, Y.C.
Samudra, G.
Chin, A.
Hwang, W.S.
Chen, J.H.
Wang, S.J.
Kwong, D.-L.
spellingShingle Wang, Y.Q.
Singh, P.K.
Yoo, W.J.
Yeo, Y.C.
Samudra, G.
Chin, A.
Hwang, W.S.
Chen, J.H.
Wang, S.J.
Kwong, D.-L.
Long retention and low voltage operation using IrO2/HfAlO/HfSiO/ HfAlO gate stack for memory application
author_sort Wang, Y.Q.
title Long retention and low voltage operation using IrO2/HfAlO/HfSiO/ HfAlO gate stack for memory application
title_short Long retention and low voltage operation using IrO2/HfAlO/HfSiO/ HfAlO gate stack for memory application
title_full Long retention and low voltage operation using IrO2/HfAlO/HfSiO/ HfAlO gate stack for memory application
title_fullStr Long retention and low voltage operation using IrO2/HfAlO/HfSiO/ HfAlO gate stack for memory application
title_full_unstemmed Long retention and low voltage operation using IrO2/HfAlO/HfSiO/ HfAlO gate stack for memory application
title_sort long retention and low voltage operation using iro2/hfalo/hfsio/ hfalo gate stack for memory application
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/83901
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