Long retention and low voltage operation using IrO2/HfAlO/HfSiO/ HfAlO gate stack for memory application

• Main Authors: Wang, Y.Q., Singh, P.K., Yoo, W.J., Yeo, Y.C., Samudra, G., Chin, A., Hwang, W.S., Chen, J.H., Wang, S.J., Kwong, D.-L.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Conference or Workshop Item
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/83901
• Institution: National University of Singapore

Technical Digest - International Electron Devices Meeting, IEDM