Novel SiO2/AlN/HfAlO/IrO2 memory with fast erase, large ΔVth and good retention

10.1109/.2005.1469271

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Bibliographic Details
Main Authors:	Lai, C.H., Chin, A., Chiang, K.C., Yoo, W.J., Cheng, C.F., McAlister, S.P., Chi, C.C., Wu, P.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/84022
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Institution:	National University of Singapore

Description
Summary:	10.1109/.2005.1469271

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