Novel SiO2/AlN/HfAlO/IrO2 memory with fast erase, large ΔVth and good retention

• Main Authors: Lai, C.H., Chin, A., Chiang, K.C., Yoo, W.J., Cheng, C.F., McAlister, S.P., Chi, C.C., Wu, P.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Conference or Workshop Item
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/84022
• Institution: National University of Singapore

10.1109/.2005.1469271