Novel SiO2/AlN/HfAlO/IrO2 memory with fast erase, large ΔVth and good retention

10.1109/.2005.1469271

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Bibliographic Details
Main Authors:	Lai, C.H., Chin, A., Chiang, K.C., Yoo, W.J., Cheng, C.F., McAlister, S.P., Chi, C.C., Wu, P.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/84022
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-84022
record_format	dspace
spelling	sg-nus-scholar.10635-840222015-01-06T22:31:29Z Novel SiO2/AlN/HfAlO/IrO2 memory with fast erase, large ΔVth and good retention Lai, C.H. Chin, A. Chiang, K.C. Yoo, W.J. Cheng, C.F. McAlister, S.P. Chi, C.C. Wu, P. ELECTRICAL & COMPUTER ENGINEERING 10.1109/.2005.1469271 Digest of Technical Papers - Symposium on VLSI Technology 2005 210-211 DTPTE 2014-10-07T04:47:53Z 2014-10-07T04:47:53Z 2005 Conference Paper Lai, C.H.,Chin, A.,Chiang, K.C.,Yoo, W.J.,Cheng, C.F.,McAlister, S.P.,Chi, C.C.,Wu, P. (2005). Novel SiO2/AlN/HfAlO/IrO2 memory with fast erase, large ΔVth and good retention. Digest of Technical Papers - Symposium on VLSI Technology 2005 : 210-211. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/.2005.1469271" target="_blank">https://doi.org/10.1109/.2005.1469271</a> 07431562 http://scholarbank.nus.edu.sg/handle/10635/84022 NOT_IN_WOS Scopus
institution	National University of Singapore
building	NUS Library
country	Singapore
collection	ScholarBank@NUS
description	10.1109/.2005.1469271
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Lai, C.H. Chin, A. Chiang, K.C. Yoo, W.J. Cheng, C.F. McAlister, S.P. Chi, C.C. Wu, P.
format	Conference or Workshop Item
author	Lai, C.H. Chin, A. Chiang, K.C. Yoo, W.J. Cheng, C.F. McAlister, S.P. Chi, C.C. Wu, P.
spellingShingle	Lai, C.H. Chin, A. Chiang, K.C. Yoo, W.J. Cheng, C.F. McAlister, S.P. Chi, C.C. Wu, P. Novel SiO2/AlN/HfAlO/IrO2 memory with fast erase, large ΔVth and good retention
author_sort	Lai, C.H.
title	Novel SiO2/AlN/HfAlO/IrO2 memory with fast erase, large ΔVth and good retention
title_short	Novel SiO2/AlN/HfAlO/IrO2 memory with fast erase, large ΔVth and good retention
title_full	Novel SiO2/AlN/HfAlO/IrO2 memory with fast erase, large ΔVth and good retention
title_fullStr	Novel SiO2/AlN/HfAlO/IrO2 memory with fast erase, large ΔVth and good retention
title_full_unstemmed	Novel SiO2/AlN/HfAlO/IrO2 memory with fast erase, large ΔVth and good retention
title_sort	novel sio2/aln/hfalo/iro2 memory with fast erase, large δvth and good retention
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/84022
_version_	1681089542843531264

Novel SiO2/AlN/HfAlO/IrO2 memory with fast erase, large ΔVth and good retention

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