Novel SiO2/AlN/HfAlO/IrO2 memory with fast erase, large ΔVth and good retention
10.1109/.2005.1469271
Saved in:
Main Authors: | Lai, C.H., Chin, A., Chiang, K.C., Yoo, W.J., Cheng, C.F., McAlister, S.P., Chi, C.C., Wu, P. |
---|---|
Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Conference or Workshop Item |
Published: |
2014
|
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/84022 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Long retention and low voltage operation using IrO2/HfAlO/HfSiO/ HfAlO gate stack for memory application
by: Wang, Y.Q., et al.
Published: (2014) -
The effect of IrO2-IrO2- Hf-LaAlO3 gate dielectric on the bias-temperature instability of 3-D GOI CMOSFETs
by: Yu, D.S., et al.
Published: (2014) -
Quantum tunneling and scalability of HfO2 and HfAlO gate stacks
by: Hou, Y.T., et al.
Published: (2014) -
MOS Characteristics of synthesized HfAlON-HfO2 stack using AlN-HfO2
by: Park, C.S., et al.
Published: (2014) -
A novel program-erasable high-k AlN-Si MIS capacitor
by: Lai, C.H., et al.
Published: (2014)