Performance boost for In0.53Ga0.47As channel N-MOSFET using silicon nitride liner stressor with high tensile stress

Performance boost for In0.53Ga0.47As channel N-MOSFET using silicon nitride liner stressor with high tensile stress

10.1109/ISDRS.2009.5378197

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Bibliographic Details
Main Authors: Chin, H.-C., Gong, X., Guo, H., Zhou, Q., Koh, S.-M., Lee, H.K., Shi, L., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/84073
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Institution: National University of Singapore
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Summary:10.1109/ISDRS.2009.5378197

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