Performance boost for In0.53Ga0.47As channel N-MOSFET using silicon nitride liner stressor with high tensile stress

• Main Authors: Chin, H.-C., Gong, X., Guo, H., Zhou, Q., Koh, S.-M., Lee, H.K., Shi, L., Yeo, Y.-C.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Conference or Workshop Item
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/84073
• Institution: National University of Singapore

10.1109/ISDRS.2009.5378197