Performance boost for In0.53Ga0.47As channel N-MOSFET using silicon nitride liner stressor with high tensile stress

10.1109/ISDRS.2009.5378197

Saved in:

Bibliographic Details
Main Authors:	Chin, H.-C., Gong, X., Guo, H., Zhou, Q., Koh, S.-M., Lee, H.K., Shi, L., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/84073
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	National University of Singapore

id	sg-nus-scholar.10635-84073
record_format	dspace
spelling	sg-nus-scholar.10635-840732015-01-09T14:05:31Z Performance boost for In0.53Ga0.47As channel N-MOSFET using silicon nitride liner stressor with high tensile stress Chin, H.-C. Gong, X. Guo, H. Zhou, Q. Koh, S.-M. Lee, H.K. Shi, L. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING 10.1109/ISDRS.2009.5378197 2009 International Semiconductor Device Research Symposium, ISDRS '09 - 2014-10-07T04:48:29Z 2014-10-07T04:48:29Z 2009 Conference Paper Chin, H.-C.,Gong, X.,Guo, H.,Zhou, Q.,Koh, S.-M.,Lee, H.K.,Shi, L.,Yeo, Y.-C. (2009). Performance boost for In0.53Ga0.47As channel N-MOSFET using silicon nitride liner stressor with high tensile stress. 2009 International Semiconductor Device Research Symposium, ISDRS '09 : -. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/ISDRS.2009.5378197" target="_blank">https://doi.org/10.1109/ISDRS.2009.5378197</a> 9781424460304 http://scholarbank.nus.edu.sg/handle/10635/84073 NOT_IN_WOS Scopus
institution	National University of Singapore
building	NUS Library
country	Singapore
collection	ScholarBank@NUS
description	10.1109/ISDRS.2009.5378197
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Chin, H.-C. Gong, X. Guo, H. Zhou, Q. Koh, S.-M. Lee, H.K. Shi, L. Yeo, Y.-C.
format	Conference or Workshop Item
author	Chin, H.-C. Gong, X. Guo, H. Zhou, Q. Koh, S.-M. Lee, H.K. Shi, L. Yeo, Y.-C.
spellingShingle	Chin, H.-C. Gong, X. Guo, H. Zhou, Q. Koh, S.-M. Lee, H.K. Shi, L. Yeo, Y.-C. Performance boost for In0.53Ga0.47As channel N-MOSFET using silicon nitride liner stressor with high tensile stress
author_sort	Chin, H.-C.
title	Performance boost for In0.53Ga0.47As channel N-MOSFET using silicon nitride liner stressor with high tensile stress
title_short	Performance boost for In0.53Ga0.47As channel N-MOSFET using silicon nitride liner stressor with high tensile stress
title_full	Performance boost for In0.53Ga0.47As channel N-MOSFET using silicon nitride liner stressor with high tensile stress
title_fullStr	Performance boost for In0.53Ga0.47As channel N-MOSFET using silicon nitride liner stressor with high tensile stress
title_full_unstemmed	Performance boost for In0.53Ga0.47As channel N-MOSFET using silicon nitride liner stressor with high tensile stress
title_sort	performance boost for in0.53ga0.47as channel n-mosfet using silicon nitride liner stressor with high tensile stress
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/84073
_version_	1681089552129720320

Performance boost for In0.53Ga0.47As channel N-MOSFET using silicon nitride liner stressor with high tensile stress

Similar Items