Performance boost for In0.53Ga0.47As channel N-MOSFET using silicon nitride liner stressor with high tensile stress
10.1109/ISDRS.2009.5378197
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| التنسيق: | Conference or Workshop Item |
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2014
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| الوصول للمادة أونلاين: | http://scholarbank.nus.edu.sg/handle/10635/84073 |
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sg-nus-scholar.10635-840732024-11-10T04:42:38Z Performance boost for In0.53Ga0.47As channel N-MOSFET using silicon nitride liner stressor with high tensile stress Chin, H.-C. Gong, X. Guo, H. Zhou, Q. Koh, S.-M. Lee, H.K. Shi, L. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING 10.1109/ISDRS.2009.5378197 2009 International Semiconductor Device Research Symposium, ISDRS '09 - 2014-10-07T04:48:29Z 2014-10-07T04:48:29Z 2009 Conference Paper Chin, H.-C.,Gong, X.,Guo, H.,Zhou, Q.,Koh, S.-M.,Lee, H.K.,Shi, L.,Yeo, Y.-C. (2009). Performance boost for In0.53Ga0.47As channel N-MOSFET using silicon nitride liner stressor with high tensile stress. 2009 International Semiconductor Device Research Symposium, ISDRS '09 : -. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/ISDRS.2009.5378197" target="_blank">https://doi.org/10.1109/ISDRS.2009.5378197</a> 9781424460304 http://scholarbank.nus.edu.sg/handle/10635/84073 NOT_IN_WOS Scopus |
| institution |
National University of Singapore |
| building |
NUS Library |
| continent |
Asia |
| country |
Singapore Singapore |
| content_provider |
NUS Library |
| collection |
ScholarBank@NUS |
| description |
10.1109/ISDRS.2009.5378197 |
| author2 |
ELECTRICAL & COMPUTER ENGINEERING |
| author_facet |
ELECTRICAL & COMPUTER ENGINEERING Chin, H.-C. Gong, X. Guo, H. Zhou, Q. Koh, S.-M. Lee, H.K. Shi, L. Yeo, Y.-C. |
| format |
Conference or Workshop Item |
| author |
Chin, H.-C. Gong, X. Guo, H. Zhou, Q. Koh, S.-M. Lee, H.K. Shi, L. Yeo, Y.-C. |
| spellingShingle |
Chin, H.-C. Gong, X. Guo, H. Zhou, Q. Koh, S.-M. Lee, H.K. Shi, L. Yeo, Y.-C. Performance boost for In0.53Ga0.47As channel N-MOSFET using silicon nitride liner stressor with high tensile stress |
| author_sort |
Chin, H.-C. |
| title |
Performance boost for In0.53Ga0.47As channel N-MOSFET using silicon nitride liner stressor with high tensile stress |
| title_short |
Performance boost for In0.53Ga0.47As channel N-MOSFET using silicon nitride liner stressor with high tensile stress |
| title_full |
Performance boost for In0.53Ga0.47As channel N-MOSFET using silicon nitride liner stressor with high tensile stress |
| title_fullStr |
Performance boost for In0.53Ga0.47As channel N-MOSFET using silicon nitride liner stressor with high tensile stress |
| title_full_unstemmed |
Performance boost for In0.53Ga0.47As channel N-MOSFET using silicon nitride liner stressor with high tensile stress |
| title_sort |
performance boost for in0.53ga0.47as channel n-mosfet using silicon nitride liner stressor with high tensile stress |
| publishDate |
2014 |
| url |
http://scholarbank.nus.edu.sg/handle/10635/84073 |
| _version_ |
1821218150707888128 |