Silicidation using nickel and Dysprosium stack on Si(100): NiSi 2 formation and impact on Schottky Barrier Height

Silicidation using nickel and Dysprosium stack on Si(100): NiSi 2 formation and impact on Schottky Barrier Height

10.1109/ISDRS.2011.6135352

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Bibliographic Details
Main Authors: Lim, P.S.Y., Zhou, Q., Chi, D., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/84178
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Institution: National University of Singapore
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Summary:10.1109/ISDRS.2011.6135352

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