Sims depth profiling analysis of Cu/Ta/SiO2 interfacial diffusion at different annealing temperature

Sims depth profiling analysis of Cu/Ta/SiO2 interfacial diffusion at different annealing temperature

International Journal of Modern Physics B

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Bibliographic Details
Main Authors: Liu, L., Gong, H., Wang, Y., Wee, A.T.S., Liu, R.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/84185
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Institution: National University of Singapore
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