Studies of NBTI in pMOSFETs with thermal and plasma nitrided SiON gate oxides by OFIT and FPM methods

10.1109/IRPS.2009.5173390

محفوظ في:

التفاصيل البيبلوغرافية
المؤلفون الرئيسيون:	Liu, W.J., Huang, D., Sun, Q.Q., Liao, C.C., Zhang, L.F., Gan, Z.H., Wong, W., Li, M.-F.
مؤلفون آخرون:	ELECTRICAL & COMPUTER ENGINEERING
التنسيق:	Conference or Workshop Item
منشور في:	2014
الموضوعات:	NBTI p-MOSFETs Plasma nitrided oxide Thermal nitrided oxide
الوصول للمادة أونلاين:	http://scholarbank.nus.edu.sg/handle/10635/84243
الوسوم:	إضافة وسم لا توجد وسوم, كن أول من يضع وسما على هذه التسجيلة!
المؤسسة:	National University of Singapore

id	sg-nus-scholar.10635-84243
record_format	dspace
spelling	sg-nus-scholar.10635-842432024-11-10T17:47:18Z Studies of NBTI in pMOSFETs with thermal and plasma nitrided SiON gate oxides by OFIT and FPM methods Liu, W.J. Huang, D. Sun, Q.Q. Liao, C.C. Zhang, L.F. Gan, Z.H. Wong, W. Li, M.-F. ELECTRICAL & COMPUTER ENGINEERING NBTI p-MOSFETs Plasma nitrided oxide Thermal nitrided oxide 10.1109/IRPS.2009.5173390 IEEE International Reliability Physics Symposium Proceedings 964-968 2014-10-07T04:50:26Z 2014-10-07T04:50:26Z 2009 Conference Paper Liu, W.J., Huang, D., Sun, Q.Q., Liao, C.C., Zhang, L.F., Gan, Z.H., Wong, W., Li, M.-F. (2009). Studies of NBTI in pMOSFETs with thermal and plasma nitrided SiON gate oxides by OFIT and FPM methods. IEEE International Reliability Physics Symposium Proceedings : 964-968. ScholarBank@NUS Repository. https://doi.org/10.1109/IRPS.2009.5173390 0780388038 15417026 http://scholarbank.nus.edu.sg/handle/10635/84243 000272068100170 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	NBTI p-MOSFETs Plasma nitrided oxide Thermal nitrided oxide
spellingShingle	NBTI p-MOSFETs Plasma nitrided oxide Thermal nitrided oxide Liu, W.J. Huang, D. Sun, Q.Q. Liao, C.C. Zhang, L.F. Gan, Z.H. Wong, W. Li, M.-F. Studies of NBTI in pMOSFETs with thermal and plasma nitrided SiON gate oxides by OFIT and FPM methods
description	10.1109/IRPS.2009.5173390
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Liu, W.J. Huang, D. Sun, Q.Q. Liao, C.C. Zhang, L.F. Gan, Z.H. Wong, W. Li, M.-F.
format	Conference or Workshop Item
author	Liu, W.J. Huang, D. Sun, Q.Q. Liao, C.C. Zhang, L.F. Gan, Z.H. Wong, W. Li, M.-F.
author_sort	Liu, W.J.
title	Studies of NBTI in pMOSFETs with thermal and plasma nitrided SiON gate oxides by OFIT and FPM methods
title_short	Studies of NBTI in pMOSFETs with thermal and plasma nitrided SiON gate oxides by OFIT and FPM methods
title_full	Studies of NBTI in pMOSFETs with thermal and plasma nitrided SiON gate oxides by OFIT and FPM methods
title_fullStr	Studies of NBTI in pMOSFETs with thermal and plasma nitrided SiON gate oxides by OFIT and FPM methods
title_full_unstemmed	Studies of NBTI in pMOSFETs with thermal and plasma nitrided SiON gate oxides by OFIT and FPM methods
title_sort	studies of nbti in pmosfets with thermal and plasma nitrided sion gate oxides by ofit and fpm methods
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/84243
_version_	1821191647904399360

Studies of NBTI in pMOSFETs with thermal and plasma nitrided SiON gate oxides by OFIT and FPM methods

مواد مشابهة