Studies of NBTI in pMOSFETs with thermal and plasma nitrided SiON gate oxides by OFIT and FPM methods

• Main Authors: Liu, W.J., Huang, D., Sun, Q.Q., Liao, C.C., Zhang, L.F., Gan, Z.H., Wong, W., Li, M.-F.
• 其他作者: ELECTRICAL & COMPUTER ENGINEERING
• 格式: Conference or Workshop Item
• 出版: 2014
• 主題: NBTI; p-MOSFETs; Plasma nitrided oxide; Thermal nitrided oxide
• 在線閱讀: http://scholarbank.nus.edu.sg/handle/10635/84243
• 機構: National University of Singapore

10.1109/IRPS.2009.5173390