Sub 50nm strained n-FETs formed on silicon-germanium-on-insulator substrates and the integration of silicon source/drain stressors

Materials Research Society Symposium Proceedings

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Bibliographic Details
Main Authors:	Wang, G.H., Toh, E.-H., Hoe, K.-M., Tripathy, S., Lo, G.-Q., Samudra, G., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/84253
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-84253
record_format	dspace
spelling	sg-nus-scholar.10635-842532024-11-09T07:32:14Z Sub 50nm strained n-FETs formed on silicon-germanium-on-insulator substrates and the integration of silicon source/drain stressors Wang, G.H. Toh, E.-H. Hoe, K.-M. Tripathy, S. Lo, G.-Q. Samudra, G. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING Materials Research Society Symposium Proceedings 995 49-54 MRSPD 2014-10-07T04:50:34Z 2014-10-07T04:50:34Z 2007 Conference Paper Wang, G.H.,Toh, E.-H.,Hoe, K.-M.,Tripathy, S.,Lo, G.-Q.,Samudra, G.,Yeo, Y.-C. (2007). Sub 50nm strained n-FETs formed on silicon-germanium-on-insulator substrates and the integration of silicon source/drain stressors. Materials Research Society Symposium Proceedings 995 : 49-54. ScholarBank@NUS Repository. 9781605604275 02729172 http://scholarbank.nus.edu.sg/handle/10635/84253 NOT_IN_WOS Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	Materials Research Society Symposium Proceedings
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Wang, G.H. Toh, E.-H. Hoe, K.-M. Tripathy, S. Lo, G.-Q. Samudra, G. Yeo, Y.-C.
format	Conference or Workshop Item
author	Wang, G.H. Toh, E.-H. Hoe, K.-M. Tripathy, S. Lo, G.-Q. Samudra, G. Yeo, Y.-C.
spellingShingle	Wang, G.H. Toh, E.-H. Hoe, K.-M. Tripathy, S. Lo, G.-Q. Samudra, G. Yeo, Y.-C. Sub 50nm strained n-FETs formed on silicon-germanium-on-insulator substrates and the integration of silicon source/drain stressors
author_sort	Wang, G.H.
title	Sub 50nm strained n-FETs formed on silicon-germanium-on-insulator substrates and the integration of silicon source/drain stressors
title_short	Sub 50nm strained n-FETs formed on silicon-germanium-on-insulator substrates and the integration of silicon source/drain stressors
title_full	Sub 50nm strained n-FETs formed on silicon-germanium-on-insulator substrates and the integration of silicon source/drain stressors
title_fullStr	Sub 50nm strained n-FETs formed on silicon-germanium-on-insulator substrates and the integration of silicon source/drain stressors
title_full_unstemmed	Sub 50nm strained n-FETs formed on silicon-germanium-on-insulator substrates and the integration of silicon source/drain stressors
title_sort	sub 50nm strained n-fets formed on silicon-germanium-on-insulator substrates and the integration of silicon source/drain stressors
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/84253
_version_	1821188810424188928

Sub 50nm strained n-FETs formed on silicon-germanium-on-insulator substrates and the integration of silicon source/drain stressors

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