Thickness dependent electrical characteristics of InAlN/GaN-on-Si MOSHEMTs with Y2O3 gate dielectric and Au-free ohmic contact

Thickness dependent electrical characteristics of InAlN/GaN-on-Si MOSHEMTs with Y2O3 gate dielectric and Au-free ohmic contact

10.1149/05302.0065ecst

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Bibliographic Details
Main Authors: Bera, M.K., Liu, Y., Kyaw, L.M., Ngoo, Y.J., Chor, E.F.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/84303
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Institution: National University of Singapore
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Summary:10.1149/05302.0065ecst

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