Thickness dependent electrical characteristics of InAlN/GaN-on-Si MOSHEMTs with Y2O3 gate dielectric and Au-free ohmic contact

• Main Authors: Bera, M.K., Liu, Y., Kyaw, L.M., Ngoo, Y.J., Chor, E.F.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Conference or Workshop Item
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/84303
• Institution: National University of Singapore

10.1149/05302.0065ecst