Thickness dependent electrical characteristics of InAlN/GaN-on-Si MOSHEMTs with Y2O3 gate dielectric and Au-free ohmic contact
10.1149/05302.0065ecst
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2014
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sg-nus-scholar.10635-843032023-10-29T23:17:55Z Thickness dependent electrical characteristics of InAlN/GaN-on-Si MOSHEMTs with Y2O3 gate dielectric and Au-free ohmic contact Bera, M.K. Liu, Y. Kyaw, L.M. Ngoo, Y.J. Chor, E.F. ELECTRICAL & COMPUTER ENGINEERING 10.1149/05302.0065ecst ECS Transactions 53 2 65-74 2014-10-07T04:51:08Z 2014-10-07T04:51:08Z 2013 Conference Paper Bera, M.K., Liu, Y., Kyaw, L.M., Ngoo, Y.J., Chor, E.F. (2013). Thickness dependent electrical characteristics of InAlN/GaN-on-Si MOSHEMTs with Y2O3 gate dielectric and Au-free ohmic contact. ECS Transactions 53 (2) : 65-74. ScholarBank@NUS Repository. https://doi.org/10.1149/05302.0065ecst 9781607683759 19385862 http://scholarbank.nus.edu.sg/handle/10635/84303 000338950500009 Scopus |
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National University of Singapore |
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NUS Library |
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Asia |
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Singapore Singapore |
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NUS Library |
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ScholarBank@NUS |
| description |
10.1149/05302.0065ecst |
| author2 |
ELECTRICAL & COMPUTER ENGINEERING |
| author_facet |
ELECTRICAL & COMPUTER ENGINEERING Bera, M.K. Liu, Y. Kyaw, L.M. Ngoo, Y.J. Chor, E.F. |
| format |
Conference or Workshop Item |
| author |
Bera, M.K. Liu, Y. Kyaw, L.M. Ngoo, Y.J. Chor, E.F. |
| spellingShingle |
Bera, M.K. Liu, Y. Kyaw, L.M. Ngoo, Y.J. Chor, E.F. Thickness dependent electrical characteristics of InAlN/GaN-on-Si MOSHEMTs with Y2O3 gate dielectric and Au-free ohmic contact |
| author_sort |
Bera, M.K. |
| title |
Thickness dependent electrical characteristics of InAlN/GaN-on-Si MOSHEMTs with Y2O3 gate dielectric and Au-free ohmic contact |
| title_short |
Thickness dependent electrical characteristics of InAlN/GaN-on-Si MOSHEMTs with Y2O3 gate dielectric and Au-free ohmic contact |
| title_full |
Thickness dependent electrical characteristics of InAlN/GaN-on-Si MOSHEMTs with Y2O3 gate dielectric and Au-free ohmic contact |
| title_fullStr |
Thickness dependent electrical characteristics of InAlN/GaN-on-Si MOSHEMTs with Y2O3 gate dielectric and Au-free ohmic contact |
| title_full_unstemmed |
Thickness dependent electrical characteristics of InAlN/GaN-on-Si MOSHEMTs with Y2O3 gate dielectric and Au-free ohmic contact |
| title_sort |
thickness dependent electrical characteristics of inaln/gan-on-si moshemts with y2o3 gate dielectric and au-free ohmic contact |
| publishDate |
2014 |
| url |
http://scholarbank.nus.edu.sg/handle/10635/84303 |
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1781784440789270528 |