Zirconium dioxide as a gate dielectric in metal-insulator-silicon structures and current transport mechanisms

Zirconium dioxide as a gate dielectric in metal-insulator-silicon structures and current transport mechanisms

IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE

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Bibliographic Details
Main Authors: Ng, T.H., Koh, B.H., Chim, W.K., Choi, W.K., Zheng, J.X., Tung, C.H., Du, A.Y.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Subjects:
Frenkel-poole (F-P) emission
Metal-insulator-semiconductor (MIS)
Schottky emission
Zirconium dioxide
Online Access:http://scholarbank.nus.edu.sg/handle/10635/84368
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Institution: National University of Singapore
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Summary:IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE

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