Zirconium dioxide as a gate dielectric in metal-insulator-silicon structures and current transport mechanisms

Zirconium dioxide as a gate dielectric in metal-insulator-silicon structures and current transport mechanisms

IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE

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書目詳細資料
Main Authors: Ng, T.H., Koh, B.H., Chim, W.K., Choi, W.K., Zheng, J.X., Tung, C.H., Du, A.Y.
其他作者: ELECTRICAL & COMPUTER ENGINEERING
格式: Conference or Workshop Item
出版: 2014
主題:
Frenkel-poole (F-P) emission
Metal-insulator-semiconductor (MIS)
Schottky emission
Zirconium dioxide
在線閱讀:http://scholarbank.nus.edu.sg/handle/10635/84368
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總結:IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE

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