Physical and electrical characteristics of HfN gate electrode for advanced MOS devices

10.1109/LED.2003.812143

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Bibliographic Details
Main Authors:	Yu, H.Y., Lim, H.F., Chen, J.H., Li, M.F., Zhu, C., Tung, C.H., Du, A.Y., Wang, W.D., Chi, D.Z., Kwong, D.-L.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Others
Published:	2014
Subjects:	HfN Metal gate Midgap work function MOSFET's TaN
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/84420
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-84420
record_format	dspace
spelling	sg-nus-scholar.10635-844202024-11-12T21:59:46Z Physical and electrical characteristics of HfN gate electrode for advanced MOS devices Yu, H.Y. Lim, H.F. Chen, J.H. Li, M.F. Zhu, C. Tung, C.H. Du, A.Y. Wang, W.D. Chi, D.Z. Kwong, D.-L. ELECTRICAL & COMPUTER ENGINEERING HfN Metal gate Midgap work function MOSFET's TaN 10.1109/LED.2003.812143 IEEE Electron Device Letters 24 4 230-232 EDLED 2014-10-07T04:52:28Z 2014-10-07T04:52:28Z 2003-04 Others Yu, H.Y., Lim, H.F., Chen, J.H., Li, M.F., Zhu, C., Tung, C.H., Du, A.Y., Wang, W.D., Chi, D.Z., Kwong, D.-L. (2003-04). Physical and electrical characteristics of HfN gate electrode for advanced MOS devices. IEEE Electron Device Letters 24 (4) : 230-232. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2003.812143 07413106 http://scholarbank.nus.edu.sg/handle/10635/84420 000183670900009 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	HfN Metal gate Midgap work function MOSFET's TaN
spellingShingle	HfN Metal gate Midgap work function MOSFET's TaN Yu, H.Y. Lim, H.F. Chen, J.H. Li, M.F. Zhu, C. Tung, C.H. Du, A.Y. Wang, W.D. Chi, D.Z. Kwong, D.-L. Physical and electrical characteristics of HfN gate electrode for advanced MOS devices
description	10.1109/LED.2003.812143
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Yu, H.Y. Lim, H.F. Chen, J.H. Li, M.F. Zhu, C. Tung, C.H. Du, A.Y. Wang, W.D. Chi, D.Z. Kwong, D.-L.
format	Others
author	Yu, H.Y. Lim, H.F. Chen, J.H. Li, M.F. Zhu, C. Tung, C.H. Du, A.Y. Wang, W.D. Chi, D.Z. Kwong, D.-L.
author_sort	Yu, H.Y.
title	Physical and electrical characteristics of HfN gate electrode for advanced MOS devices
title_short	Physical and electrical characteristics of HfN gate electrode for advanced MOS devices
title_full	Physical and electrical characteristics of HfN gate electrode for advanced MOS devices
title_fullStr	Physical and electrical characteristics of HfN gate electrode for advanced MOS devices
title_full_unstemmed	Physical and electrical characteristics of HfN gate electrode for advanced MOS devices
title_sort	physical and electrical characteristics of hfn gate electrode for advanced mos devices
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/84420
_version_	1821208959188467712

Physical and electrical characteristics of HfN gate electrode for advanced MOS devices

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