Physical and electrical characteristics of HfN gate electrode for advanced MOS devices

• Main Authors: Yu, H.Y., Lim, H.F., Chen, J.H., Li, M.F., Zhu, C., Tung, C.H., Du, A.Y., Wang, W.D., Chi, D.Z., Kwong, D.-L.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Others
• Published: 2014
• Subjects: HfN; Metal gate; Midgap work function; MOSFET's; TaN
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/84420
• Institution: National University of Singapore

10.1109/LED.2003.812143