Diffusion barrier properties of ionized metal plasma deposited tantalum nitride thin films between copper and silicon dioxide

Diffusion barrier properties of ionized metal plasma deposited tantalum nitride thin films between copper and silicon dioxide

10.1023/A:1013088624226

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Bibliographic Details
Main Authors: Latt, K.M., Lee, Y.K., Seng, H.L., Osipowicz, T.
Other Authors: PHYSICS
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/96223
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Institution: National University of Singapore
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Summary:10.1023/A:1013088624226

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