Diffusion barrier properties of ionized metal plasma deposited tantalum nitride thin films between copper and silicon dioxide

10.1023/A:1013088624226

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Bibliographic Details
Main Authors: Latt, K.M., Lee, Y.K., Seng, H.L., Osipowicz, T.
Other Authors: PHYSICS
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/96223
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Institution: National University of Singapore

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