Diffusion barrier properties of ionized metal plasma deposited tantalum nitride thin films between copper and silicon dioxide
10.1023/A:1013088624226
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sg-nus-scholar.10635-962232024-11-12T02:04:52Z Diffusion barrier properties of ionized metal plasma deposited tantalum nitride thin films between copper and silicon dioxide Latt, K.M. Lee, Y.K. Seng, H.L. Osipowicz, T. PHYSICS 10.1023/A:1013088624226 Journal of Materials Science 36 24 5845-5851 JMTSA 2014-10-16T09:20:58Z 2014-10-16T09:20:58Z 2001-12-15 Article Latt, K.M., Lee, Y.K., Seng, H.L., Osipowicz, T. (2001-12-15). Diffusion barrier properties of ionized metal plasma deposited tantalum nitride thin films between copper and silicon dioxide. Journal of Materials Science 36 (24) : 5845-5851. ScholarBank@NUS Repository. https://doi.org/10.1023/A:1013088624226 00222461 http://scholarbank.nus.edu.sg/handle/10635/96223 000172368200016 Scopus |
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National University of Singapore |
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NUS Library |
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Asia |
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Singapore Singapore |
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ScholarBank@NUS |
| description |
10.1023/A:1013088624226 |
| author2 |
PHYSICS |
| author_facet |
PHYSICS Latt, K.M. Lee, Y.K. Seng, H.L. Osipowicz, T. |
| format |
Article |
| author |
Latt, K.M. Lee, Y.K. Seng, H.L. Osipowicz, T. |
| spellingShingle |
Latt, K.M. Lee, Y.K. Seng, H.L. Osipowicz, T. Diffusion barrier properties of ionized metal plasma deposited tantalum nitride thin films between copper and silicon dioxide |
| author_sort |
Latt, K.M. |
| title |
Diffusion barrier properties of ionized metal plasma deposited tantalum nitride thin films between copper and silicon dioxide |
| title_short |
Diffusion barrier properties of ionized metal plasma deposited tantalum nitride thin films between copper and silicon dioxide |
| title_full |
Diffusion barrier properties of ionized metal plasma deposited tantalum nitride thin films between copper and silicon dioxide |
| title_fullStr |
Diffusion barrier properties of ionized metal plasma deposited tantalum nitride thin films between copper and silicon dioxide |
| title_full_unstemmed |
Diffusion barrier properties of ionized metal plasma deposited tantalum nitride thin films between copper and silicon dioxide |
| title_sort |
diffusion barrier properties of ionized metal plasma deposited tantalum nitride thin films between copper and silicon dioxide |
| publishDate |
2014 |
| url |
http://scholarbank.nus.edu.sg/handle/10635/96223 |
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1821213204741619712 |