Diffusion barrier properties of ionized metal plasma deposited tantalum nitride thin films between copper and silicon dioxide

10.1023/A:1013088624226

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Main Authors: Latt, K.M., Lee, Y.K., Seng, H.L., Osipowicz, T.
Other Authors: PHYSICS
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/96223
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Institution: National University of Singapore
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spelling sg-nus-scholar.10635-962232024-11-12T02:04:52Z Diffusion barrier properties of ionized metal plasma deposited tantalum nitride thin films between copper and silicon dioxide Latt, K.M. Lee, Y.K. Seng, H.L. Osipowicz, T. PHYSICS 10.1023/A:1013088624226 Journal of Materials Science 36 24 5845-5851 JMTSA 2014-10-16T09:20:58Z 2014-10-16T09:20:58Z 2001-12-15 Article Latt, K.M., Lee, Y.K., Seng, H.L., Osipowicz, T. (2001-12-15). Diffusion barrier properties of ionized metal plasma deposited tantalum nitride thin films between copper and silicon dioxide. Journal of Materials Science 36 (24) : 5845-5851. ScholarBank@NUS Repository. https://doi.org/10.1023/A:1013088624226 00222461 http://scholarbank.nus.edu.sg/handle/10635/96223 000172368200016 Scopus
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
description 10.1023/A:1013088624226
author2 PHYSICS
author_facet PHYSICS
Latt, K.M.
Lee, Y.K.
Seng, H.L.
Osipowicz, T.
format Article
author Latt, K.M.
Lee, Y.K.
Seng, H.L.
Osipowicz, T.
spellingShingle Latt, K.M.
Lee, Y.K.
Seng, H.L.
Osipowicz, T.
Diffusion barrier properties of ionized metal plasma deposited tantalum nitride thin films between copper and silicon dioxide
author_sort Latt, K.M.
title Diffusion barrier properties of ionized metal plasma deposited tantalum nitride thin films between copper and silicon dioxide
title_short Diffusion barrier properties of ionized metal plasma deposited tantalum nitride thin films between copper and silicon dioxide
title_full Diffusion barrier properties of ionized metal plasma deposited tantalum nitride thin films between copper and silicon dioxide
title_fullStr Diffusion barrier properties of ionized metal plasma deposited tantalum nitride thin films between copper and silicon dioxide
title_full_unstemmed Diffusion barrier properties of ionized metal plasma deposited tantalum nitride thin films between copper and silicon dioxide
title_sort diffusion barrier properties of ionized metal plasma deposited tantalum nitride thin films between copper and silicon dioxide
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/96223
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