Evolution of Fermi level position and Schottky barrier height at Ni/MgO(0 0 1) interface
10.1016/j.susc.2005.10.010
Saved in:
Main Authors: | Mi, Y.Y., Wang, S.J., Dong, Y.F., Chai, J.W., Pan, J.S., Huan, A.C.H., Ong, C.K. |
---|---|
Other Authors: | PHYSICS |
Format: | Article |
Published: |
2014
|
Subjects: | |
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/96533 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
First-principles studies on initial growth of Ni on MgO(0 0 1) surface
by: Dong, Y.F., et al.
Published: (2014) -
Selenium segregation for effective schottky barrier height reduction in NiGe/n-Ge contacts
by: Tong, Y., et al.
Published: (2014) -
Drivability improvement in Schottky barrier source/drain MOSFETs with strained-Si channel by Schottky barrier height reduction
by: Zhu, S., et al.
Published: (2014) -
The role of carbon and dysprosium in Ni[Dy]Si:C contacts for schottky-barrier height reduction and application in N-channel MOSFETs with Si:C source/drain stressors
by: Lee, R.T.P., et al.
Published: (2014) -
Oxygen coadsorption and reaction with potassium on MgO thin films grown on Ru(001)
by: Huang, H.H., et al.
Published: (2014)